Datasheet > 2SC4509R

2SC4509R

更新时间： 2024-11-07 23:20:19

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其他 - ETC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	210K
描述
BJT

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中文翻译

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数据手册

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2SC4509R 数据手册

FUJI POWER TRANSISTOR

2SC4509

TRIPLE DIFFUSED PLANER TYPE

HIGH VOLTAGE,HIGH SPEED SWITCHING

Outline Drawings

TO-3PF

Features

High voltage,High speed switching

Low saturation voltage

High reliability

Applications

Switching regulators

DC-DCconvertors

JEDEC

EIAJ

(TO-3PF)

Solid state relay

General purpose power amplifiers

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Item

Symbol

VCBO

Ratings

500

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

400

VCEO

VCEO(SUS)

VEBO

Base current

°C

Collector power disspation

Operating junction temperature

Storage temperature

+150

-55 to +150

Tstg

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Symbol

VCBO

VCEO

VCEO(SUS)

VEBO

ICBO

Test Conditions

Item

ICBO = 1mA

500

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector-Base leakage current

Emitter-Base leakage current

D.C. current gain

IC = 200mA

400

IEBO = 1mA

0.1

VCBO = 450V

VEBO = 10V

IEBO

hFE

IC = 1A, VCE = 5V

IC = 4A, IB = 0.8A

VCE(Sat)

VBE(Sat)

ton

0.8

1.2

1.0

2.5

0.5

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

µs

IC = 5A, IB1 = 0.5A

tstg

IB2 = -1A, RL = 30 ohm

Switching time

Pw = 20 s Duty=<2%

Thermal characteristics

Min.

Typ.

Max. Units

Item

Symbol

Rth(j-c)

Test Conditions

Junction to case

1.56

°C/W

Thermal resistance

12 3

中文翻译

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