Datasheet > 2SC4511_01

2SC4511_01

更新时间： 2024-09-20 07:30:59

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	27K
描述
Silicon NPN Triple Diffused Planar Transistor

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中文翻译

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数据手册

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2SC4511_01 数据手册

2 S C4 5 1 1

Absolute maximum ratings

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725)

Application : Audio and General Purpose

External Dimensions FM20(TO220F)

■

(Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

Ratings

Symbol

I^CBO

Ratings

10max

80min

Symbol

Conditions

Unit

µA

±0.2

4.2

±0.2

10.1

0.5

2.8

V^CBO

VCEO

VEBO

120

V^CB=120V

IEBO

V^EB=6V

V(BR)CEO

hFE

I^C=25mA

±0.2

ø3.3

50min

V^CE=4V, IC=2A

I^C=2A, IB=0.2A

V^CE=12V, IE=–0.5A

V^CB=10V, f=1MHz

VCE(sat)

0.5max

20typ

MHz

30(Tc=25°C)

150

°C

±0.15

1.35

COB

110typ

±0.15

1.35

Tstg

–55 to +150

h^FERank O(50 to100), P(70 to140), Y(90 to180)

+0.2

-0.1

0.85

+0.2

-0.1

0.45

±0.2

2.4

2.54

■Typical Switching Characteristics (Common Emitter)

±0.2

2.2

VCC

(V)

R^L

(Ω)

I^C

(A)

VBB1

(V)

V^BB2

(V)

IB1

(A)

I^B2

(A)

ton

(µs)

tstg

(µs)

Weight : Approx 2.0g

a. Part No.

C E

b. Lot No.

–5

0.3

–0.3

0.16typ

2.60typ

0.34typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

30mA

20mA

I^B=10mA

IC=6A

0.5

Base Current I^B(A)

1.0

1.5

Collector-Emitter Voltage V^CE(V)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

300

100

200

125˚C

100

25˚C

Typ

–30˚C

0.5

0.4

0.02

100

Time t(ms)

1000 2000

0.1

0.5

5 6

0.02

0.1

0.5

5 6

Collector Current IC(A)

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

Typ

0.5

Without Heatsink

Natural Cooling

0.1

Without Heatsink

0.05

–0.02

–0.1

–1

–6

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

111

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