Datasheet > 2SC4499S

2SC4499S

更新时间： 2024-11-08 06:22:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	40K
描述
Silicon NPN Triple Diffused

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中文翻译

获取价格

数据手册

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2SC4499S 数据手册

SMD Type

Transistors

Silicon NPN Triple Diffused

2SC4499S

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

High speed and high voltage switching

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^CP

Rating

Unit

500

400

0.5

Collector peak current

Collector power dissipation

TC=25

I^C

0.75

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CEO(sus)

V^(BR)EBO

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector to emitter sustain voltage

Emitter to base breakdown voltage

400

IC = 0.1 A, RBE = ,L = 100 mH

IE = 10 mA, IC = 0

VCB = 400 V, IE = 0

Collector cutoff current

DC current transfer ratio

ìA

ICEO

VCE = 350 V, RBE =

V^CE= 5 V, IC = 0.25 A*1

V^CE= 5 V, IC = 0.5 A*1

IC = 0.25 A, IB = 0.05 A*1

IC = 0.5 A, IB1 = -IB2 = 0.1 A,

VCC= 150 V

h^FE

Collector to emitter saturation voltage

Base to emitter saturation voltage

Turn on time

V^CE(sat)

V^BE(sat)

t^on

1.0

1.5

1.0

ìs

Storage time

t^stg

Fall time

t^f

1.0

* 1 Pulse test.

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