Datasheet > 2SC4505

2SC4505

更新时间： 2024-11-08 12:53:43

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TYSEMI		/
页数	文件大小	规格书
2页	132K
描述
High breakdown voltage. (BVCEO = 400V) Low saturation voltage

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2SC4505 数据手册

SSMMDD TTyyppee

Transistors

Product specification

2SC4505

Features

High breakdown voltage. (B^VCEO= 400V)

Low saturation voltage,

typically V^{CE (sat)}= 0.05V at I^C/ I^B= 10mA / 1mA.

High switching speed, typically tf = 1.7ìs at Ic =100mA.

Absolute Maximum Ratings Ta = 25

Parameter

collector-base voltage

Symbol

V^CBO

Rating

Unit

400

collector-emitter voltage

emitter-base voltage

V^CEO

400

V^EBO

0.1

collector current

I^C

0.2

A *1

W *2

0.5

CollectorPower Dissipation

P^C

Junotion Temperature

T^J

150

storage Temperature

T^stg

-55 to 150

*1 Single pulse pw=20ms,Duty=1/2

*2 When mounted on a 40X40X0.7 mm ceramic board.

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与2SC4505相关器件

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2SC4505_07	ROHM	获取价格	Power Transistor (400V, 0.1A)
2SC4505N	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 100MA I(C) \| SC-62
2SC4505P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 100MA I(C) \| SC-62
2SC4505Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 100MA I(C) \| SC-62
2SC4505T100/NP	ROHM	获取价格	0.1A, 400V, NPN, Si, POWER TRANSISTOR
2SC4505T100/PQ	ROHM	获取价格	Si, SMALL SIGNAL TRANSISTOR
2SC4505T100/Q	ROHM	获取价格	0.1A, 400V, NPN, Si, POWER TRANSISTOR
2SC4505T100N	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
2SC4505T100NP	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
2SC4505T100NQ	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,