Datasheet > 2SC4093RBG-T1-A

2SC4093RBG-T1-A

更新时间： 2024-11-25 21:22:35

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	41K
描述
TRANSISTOR,BJT,NPN,20V V(BR)CEO,100MA I(C),SOT-143VAR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC4093RBG-T1-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SC4093RBG-T1-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4093

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN MINIMOLD

DESCRIPTION

The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which

enables high-isolation gain.

FEATURES

•

Low Noise

NF = 1.1 dB TYP. @ V^CE= 10 V, IC = 7 mA, f = 1 GHz

High Power gain

•

21e ²= 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

•

Maximum available power gain: MAG = 14.2 dB TYP. @ V^CE= 10 V, IC = 20 mA, f = 1 GHz

4-pin minimold Package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4093

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

2SC4093-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.0

100

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

200

150

Tstg

−65 to +150

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10519EJ01V0DS (1st edition)

(Previous No. P10365EJ3V1DS00)

Date Published October 2004 CP(K)

The mark shows major revised points.

NEC Compound Semiconductor Devices, Ltd. 1991, 2004

Printed in Japan

12 3 4 5 6 7

中文翻译

下载PDF

与2SC4093RBG-T1-A相关器件

型号	品牌	获取价格	描述	数据表
2SC4093RBG-T2	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-143VAR
2SC4093RBH	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-143VAR
2SC4093-RBH-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093RBH-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,20V V(BR)CEO,100MA I(C),SOT-143VAR
2SC4093RBH-T1	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-143VAR
2SC4093RBH-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,20V V(BR)CEO,100MA I(C),SOT-143VAR
2SC4093RBH-T2	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-143VAR
2SC4093-T1	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SC4093-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic

与2SC4093RBG-T1-A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC4093RBG-T1-A

2SC4093RBG-T1-A 技术参数

2SC4093RBG-T1-A 数据手册

与2SC4093RBG-T1-A相关器件

与2SC4093RBG-T1-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC4093RBG-T1-A

2SC4093RBG-T1-A 技术参数

2SC4093RBG-T1-A 数据手册

与2SC4093RBG-T1-A相关器件

与2SC4093RBG-T1-A相关文章

您还可以找

您在本页遇到什么问题？