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2SC3839KT147/LP PDF预览

2SC3839KT147/LP

更新时间: 2024-11-18 18:17:23
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管晶体管
页数 文件大小 规格书
3页 100K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

2SC3839KT147/LP 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74最大集电极电流 (IC):0.05 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:20 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):2000 MHz
Base Number Matches:1

2SC3839KT147/LP 数据手册

 浏览型号2SC3839KT147/LP的Datasheet PDF文件第2页浏览型号2SC3839KT147/LP的Datasheet PDF文件第3页 

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2SC3839KT147/LQ ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3839KT147/M ROHM

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2SC3839KT147/MN ROHM

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2SC3839KT147/MP ROHM

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2SC3839KT147/MQ ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3839KT147/N ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3839KT147/NP ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3839KT147/NQ ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3839KT147/P ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3839KT147/PQ ROHM

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili