Datasheet > 2SC3835

2SC3835

更新时间： 2024-01-10 12:48:54

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	120K
描述
Silicon NPN Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3835 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistor

2SC3835

DESCRIPTION

·Low Collector Saturation Voltage

: V_CE(sat)= 0.5V(Max)@ I_C=3A

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 120V (Min)

·Good Linearity of h_FE

APPLICATIONS

·Designed for use in humidifier , DC/DC converter and

general purpose applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

200

120

Collector Current-Continuous

Collector Current-Pulse

Base Current-Continuous

I_CM

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

12 3

中文翻译

下载PDF

与2SC3835相关器件

型号	品牌	获取价格	描述	数据表
2SC3835_07	SANKEN	获取价格	Silicon NPN Triple Diffused Planar Transistor
2SC3835_15	JMNIC	获取价格	Silicon NPN Power Transistor
2SC3835_2014	JMNIC	获取价格	Silicon NPN Power Transistor
2SC3835A	UTC	获取价格	Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3835B	UTC	获取价格	Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3835C	UTC	获取价格	Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3835G	ISC	获取价格	isc Silicon NPN Power Transistor
2SC3835G-A-T3P-T	UTC	获取价格	Power Bipolar Transistor
2SC3835G-B-T3N-T	UTC	获取价格	Power Bipolar Transistor
2SC3835L-A-T3P-T	UTC	获取价格	Power Bipolar Transistor