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2SC3837KT146/LN PDF预览

2SC3837KT146/LN

更新时间: 2024-11-18 18:17:23
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管晶体管
页数 文件大小 规格书
3页 100K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

2SC3837KT146/LN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.57
最大集电极电流 (IC):0.05 A基于收集器的最大容量:0.9 pF
集电极-发射极最大电压:18 V配置:SINGLE
最小直流电流增益 (hFE):27最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1500 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2SC3837KT146/LN 数据手册

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2SC3837KT146/LP ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3837KT146/M ROHM

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2SC3837KT146/MN ROHM

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2SC3837KT146/MP ROHM

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2SC3837KT146/MQ ROHM

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2SC3837KT146/NP ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3837KT146/NQ ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3837KT146/PQ ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3837KT146/Q ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3837KT146L ROHM

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR