Datasheet > 2SC3837K

2SC3837K

更新时间： 2024-11-18 06:23:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	42K
描述
Power Transistor

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中文翻译

获取价格

数据手册

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2SC3837K 数据手册

SMD Type

Transistors

Power Transistor

2SC3837K

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High transition frequency. (Typ. fT = 1.5GHz)

Small rbb'.Cc and high gain. (Typ. 6ps)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector current

Collector power dissipation

Junction temperature

Storage temperature

0.2

150

Tstg

-55 to +150

* Single pulse Pw=100ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IC=10ìA

IC=1mA

IE=10ìA

VCB=20V

VEB=10V

0.5

180

Emitter cutoff current

IEBO

Collector-emitter saturation voltage

DC current gain

VCE(sat) IC/IB=20mA/4mA

VCE=10V, IC=10mA

rbb'.Cc VCB = 10V , IC = 10mA , f = 31.8MHz

hFE

Collector-base time constant

Noise factor

Cob

4.5

0.9

VCE=12V,IC=2mA,f=200MHz,Rg=50

VCB=10V, IE=0, f=1MHz

Output capacitance *

1.5

Transition frequency

VCE=10V, IE= 10mA, f=200MHz

600 1500

MHz

* Measured using pulse current.

hFE Classification

Marking

Rank

hFE

ACN

ACP

56 120

82 180

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中文翻译

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