Datasheet > 2SC3835_07

2SC3835_07

更新时间： 2024-02-28 19:01:04

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	29K
描述
Silicon NPN Triple Diffused Planar Transistor

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2SC3835_07 数据手册

2 S C3 8 3 5

Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)

Application : Humidifier, DC-DC Converter, and General Purpose

(Ta=25°C)

External Dimensions MT-100(TO3P)

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

Symbol

Ratings

Conditions

Ratings

100max

120min

70 to 220

0.5max

1.2max

30typ

Unit

Symbol

I^CBO

Unit

µA

±0.2

4.8

±0.4

15.6

V^CBO

VCEO

VEBO

200

V^CB=200V

V^EB=8V

±0.1

2.0

9.6

120

IEBO

V(BR)CEO

hFE

I^C=50mA

±0.1

ø3.2

V^CE=4V, IC=3A

I^C=3A, IB=0.3A

V^CE=12V, IE=–0.5A

V^CB=10V, f=1MHz

7(Pulse14)

VCE(sat)

VBE(sat)

70(Tc=25°C)

150

°C

MHz

Tstg

110typ

+0.2

-0.1

+0.2

-0.1

COB

–55 to +150

1.05

0.65

1.4

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 6.0g

a. Part No.

R^L

(Ω)

VBB1

(V)

V^BB2

(V)

IB1

(A)

I^B2

(A)

ton

(µs)

V^CC

(V)

I^C

(A)

tstg

(µs)

b. Lot No.

16.7

–5

0.3

–0.6

0.5max

3.0max

–

I^CV^CECharacteristics (Typical)

VCE(sat) IB Characteristics (Typical)

I^CV^BETemperature Characteristics (Typical)

(VCE=4V)

2.6

I^B=10mA

0.005 0.01

0.05

0.1

0.5

1.0 1.1

Collector-Emitter Voltage V^CE(V)

Base Current IB(A)

Base-Emittor Voltage VBE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

200

100

300

Typ

100

0.5

0.4

0.01

0.02

100

Time t(ms)

1000 2000

0.05 0.1

0.5

0.1

0.5

Collector Current I^C(A)

Collector Current IC(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

0.5

Without Heatsink

Natural Cooling

0.1

Without Heatsink

3.5

0.05

–0.01

120

200

–0.05 –0.1

–0.5 –1

–5

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current I^E(A)

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