Datasheet > 2SC2859

2SC2859

更新时间： 2024-11-21 07:30:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	456K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SC2859 数据手册

SC2859

TRANSISTOR (NPN)

SOT–23

FEATURES

 Excellent h_FELinearity

 Switching Applications

1. BASE

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

2. EMITTER

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

3. COLLECTOR

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

150

P_C

R_ΘJA

T_j

833

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

I_C=100µA, I_E=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA, I_B=0

I_E=100µA, I_C=0

V_CB=35V, I_E=0

0.1

400

µA

I_EBO

V_EB=5V, I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V, I_C=100mA

V_CE=6V, I_C=400mA

I_C=100mA, I_B=10mA

V_CE=1V,I_C=100mA,

V_CE=6V,I_C=20mA

V_CB=6V, I_E=0, f=1MHz

DC current gain

0.25

Collector-emitter saturation voltage

Base-emitter voltage

f_T

300

MHz

Transition frequency

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1),h_FE(2)

RANK

GR(G)

200–400

70Min

RANGE h_FE(1)

70–140

120–240

40Min

25Min

RANGE h_FE(2)

MARKING

JinYu

semiconductor

www.htsemi.com

中文翻译

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