Datasheet > 2SC2859-Y

2SC2859-Y

更新时间： 2024-11-14 02:55:39

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科信 - KEXIN		/
页数	文件大小	规格书
2页	927K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC2859-Y 数据手册

SMD Type

Transistors

NPN Transistors

2SC2859

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Excellent hFE Linearity:

hFE(2)=25(min) (VCE=6V,I

C=400mA)

+0.1

-0.1

+0.05

-0.01

0.95

● Complementary to 2SA1182

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Base Current

500

℃

Collector Power Dissipation

Junction Temperature

150

125

Storage Temperature Range

Tstg

-55 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100μA， I = 0

CB= 35V , I = 0

EB= 5V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

0.25

1.2

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=100 mA, I

=10mA

0.1

0.8

C=100 mA, I

CE= 1V, I

CE= 6V, I

C= 100mA

C= 400mA

FE(1)

400

DC current gain

FE(2)

Collector output capacitance

Transition frequency

CB= 6V, I

CE= 6V, I

= 0,f=1MHz

= 20mA

300

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SC2859-O

70-140

2SC2859-Y

120-240

2SC2859-G

200-400

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