2SC2859-Y

更新时间： 2024-09-25 13:04:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体运算放大器小信号双极晶体管光电二极管
页数	文件大小	规格书
3页	141K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

2SC2859-Y 数据手册

2SC2859

TOSHIBA Transistor Silicon NPN Epitaxial (PCT process)

2SC2859

Audio Frequency Low Power Amplifier Applications

Driver Stage Amplifier Applications

Switching Applications

Unit: mm

Excellent h

linearity

= 25 (min) (V

= 6 V,

FE (2)

= 400 mA)

•

Complementary to 2SA1182.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

500

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

125

−55~125

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

TO-236MOD

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 35 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

⎯

0.1

400

⎯

μA

CBO

= 5 V, I = 0

EBO

= 1 V, I = 100 mA

⎯

FE (1)

DC current gain

(Note)

= 6 V, I = 400 mA

⎯

FE (2)

Collector-emitter saturation voltage

Base-emitter voltage

= 100 mA, I = 10 mA

0.1

0.8

300

0.25

1.0

⎯

CE (sat)

= 1 V, I = 100 mA

Transition frequency

= 6 V, I = 20 mA

MHz

Collector output capacitance

= 6 V, I = 0, f = 1 MHz

⎯

Note: h

classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400

classification O: 25 min, Y: 40 min, GR: 70 min

FE (1)

FE (2)

(

) marking symbol

Marking

2007-11-01

12 3

中文翻译

下载PDF

2SC2859-Y 替代型号

型号	品牌	替代类型	描述	数据表
2SC2859Y	TOSHIBA	完全替代	Audio Frequency Low Power Amplifier Applications

与2SC2859-Y相关器件

型号	品牌	获取价格	描述	数据表
2SC2859-Y(5LDNSO,F	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
2SC2859-Y(TE85L)	TOSHIBA	获取价格	2SC2859-Y(TE85L)
2SC2859YTE85R	TOSHIBA	获取价格	TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC2860	PANASONIC	获取价格	Si NPN Epitaxial Planar
2SC2868BL	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 100MA I(C) \| TO-92
2SC2868GR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 100MA I(C) \| TO-92
2SC2869	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
2SC2872	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 700MA I(C) \| TO-92
2SC2872/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC2872/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

与2SC2859-Y相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

14
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

81
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

72

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC2859-Y

2SC2859-Y 数据手册

2SC2859-Y 替代型号

与2SC2859-Y相关器件

与2SC2859-Y相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC2859-Y

2SC2859-Y 数据手册

2SC2859-Y 替代型号

与2SC2859-Y相关器件

与2SC2859-Y相关文章

您还可以找

您在本页遇到什么问题？