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2SC2859-GR PDF预览

2SC2859-GR

更新时间： 2024-11-21 13:04:15
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体运算放大器晶体管光电二极管
页数 文件大小 规格书
3页 141K
描述
TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

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2SC2859-GR 技术参数

生命周期：Lifetime Buy零件包装代码：SOT-23
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.4
最大集电极电流 (IC)：0.5 A集电极-发射极最大电压：30 V
配置：SINGLE最小直流电流增益 (hFE)：70
JEDEC-95代码：TO-236JESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：300 MHz
Base Number Matches：1

2SC2859-GR 数据手册

 浏览型号2SC2859-GR的Datasheet PDF文件第2页浏览型号2SC2859-GR的Datasheet PDF文件第3页 
2SC2859  
TOSHIBA Transistor Silicon NPN Epitaxial (PCT process)  
2SC2859  
Audio Frequency Low Power Amplifier Applications  
Driver Stage Amplifier Applications  
Switching Applications  
Unit: mm  
Excellent h  
linearity  
:
h
= 25 (min) (V  
= 6 V,  
FE  
FE (2)  
CE  
I
C
= 400 mA)  
•
Complementary to 2SA1182.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
35  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
500  
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
125  
−55~125  
C
T
j
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 35 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
V
V
⎯
⎯
70  
25  
⎯
⎯
⎯
⎯
⎯
⎯
0.1  
0.1  
400  
⎯
μA  
μA  
CBO  
CB  
EB  
CE  
CE  
E
I
= 5 V, I = 0  
C
EBO  
h
h
= 1 V, I = 100 mA  
⎯
FE (1)  
C
DC current gain  
(Note)  
= 6 V, I = 400 mA  
⎯
FE (2)  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 100 mA, I = 10 mA  
0.1  
0.8  
300  
7
0.25  
1.0  
⎯
V
V
CE (sat)  
C
B
V
V
V
V
= 1 V, I = 100 mA  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= 6 V, I = 20 mA  
MHz  
pF  
T
C
Collector output capacitance  
C
= 6 V, I = 0, f = 1 MHz  
⎯
ob  
E
Note: h  
h
classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400  
classification O: 25 min, Y: 40 min, GR: 70 min  
FE (1)  
FE (2)  
(
) marking symbol  
Marking  
1
2007-11-01  
123

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