Datasheet > 2SC2859

2SC2859

更新时间： 2024-11-21 06:22:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	37K
描述
Silicon NPN Epitaxial

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中文翻译

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数据手册

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2SC2859 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC2859

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

500

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

VCB = 35 V, IE = 0

VEB = 5 V, IC = 0

I^EBO

0.1

ìA

h^FE1

VCE = 1V , IC = 100mA

400

DC current gain

h^FE2 * VCE = 6V , IC = 400mA

V^{CE (sat)}IC = 100 mA, IB = 10 mA

Collector-emitter saturation voltage

Base-emitter voltage

0.1

0.8

300

0.25

1.0

V^BE

f^T

VCE = 1V, IC = 100 mA

VCE = 6V, IC = 20 mA

Transition frequency

MHz

Collector output capacitance

C^ob

VCB = 6V, IE = 0 , f = 1 MHz

* h^FE2 classification O: 25 min, Y: 40 min, GR: 70 min

hFE Classification

Marking

hFE

70 140

120 240

200 400

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