Datasheet > 2SC2814-3

2SC2814-3

更新时间： 2024-09-13 20:14:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	96K
描述
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

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技术参数
数据手册

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2SC2814-3 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.69
Is Samacsys：	N	Base Number Matches：	1

2SC2814-3 数据手册

Ordering number : ENN693F

NPN Epitaxial Planar Silicon Transistors

High-Friquency General-Purpose

Amplifier Applications

2SC2814

Features

Package Dimensions

· Ultrasmall package enabiling compactness and

slimness of sets.

unit:mm

2018B

· High f and small c (f =320MHz typ, c =0.95pF

[2SC2814]

typ).

0.4

0.16

0 to 0.1

0.95

1.9

2.9

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

˚C

Collector Dissipation

Junction Temperature

Storage Temperature

150

125

Tstg

–55 to +125

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

0.1

Collector Cutoff Current

=10V, I =0

μA

CBO

Emitter Cutoff Current

DC Current Gain

=4V, I =0

=6V, I =1mA

0.1

EBO

40*

270*

Gain-Bandwidth Product

Reverse Transfer Capacitance

Base-to-Collector Time Constant

Noise Figure

=6V, I =1mA

200

0.7

320

MHz

=6V, f=1MHz

0.95

1.2

rbb'C

=6V, I =1mA, f=31.9MHz

=6V, I =1mA, f=100MHz

3.0

Power Gain

=6V, I =1mA, f=100MHz

* : The 2SC2814 are classified as follows by h at 1mA :

(Note) Marking : F

Rank

40 to 80

60 to 120

90 to 180

135 to 270

rank : 2, 3, 4, 5

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

2SC2814/D

12 3 4 5

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