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2SC2634R PDF预览

2SC2634R

更新时间: 2024-10-27 23:20:11
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
3页 51K
描述
TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | TO-92

2SC2634R 数据手册

 浏览型号2SC2634R的Datasheet PDF文件第2页浏览型号2SC2634R的Datasheet PDF文件第3页 
Transistor  
2SC2634  
Silicon NPN epitaxial planer type  
For low-frequency and low-noise amplification  
Complementary to 2SA1127  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
Low noise voltage NV.  
High foward current transfer ratio hFE  
.
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
60  
55  
0.45+00..12  
0.45+00..12  
1.27  
1.27  
V
7
V
200  
mA  
mA  
mW  
˚C  
1 2 3  
1:Emitter  
IC  
100  
2:Collector  
3:Base  
2.54±0.15  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
JEDEC:TO–92  
EIAJ:SC–43A  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
1
Unit  
VCB = 10V, IE = 0  
1
nA  
µA  
V
Collector cutoff current  
ICEO  
VCE = 10V, IB = 0  
IC = 10µA, IE = 0  
IC = 1mA, IB = 0  
IE = 10µA, IC = 0  
VCE = 5V, IC = 2mA  
0.01  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
60  
55  
7
V
V
*
Forward current transfer ratio  
hFE  
180  
700  
0.6  
1
Collector to emitter saturation voltage VCE(sat)  
I
CE = 100mA, IB = 10mA  
V
V
Base to emitter voltage  
Transition frequency  
VBE  
fT  
VCE = 1V, IC = 30mA  
VCB = 5V, IE = –2mA, f = 200MHz  
200  
MHz  
V
CE = 10V, IC = 1mA, GV = 80dB  
Noise voltage  
NV  
150  
mV  
Rg = 100k, Function = FLAT  
*hFE Rank classification  
Rank  
hFE  
R
S
T
180 ~ 360  
260 ~ 520  
360 ~ 700  
1

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