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2SC2412KT146QR PDF预览

2SC2412KT146QR

更新时间: 2024-11-13 13:04:15
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 109K
描述
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2SC2412KT146QR 数据手册

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General purpose transistor (50V, 0.15A)  
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658  
Features  
Dimensions (Unit : mm)  
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)  
2. Complements the 2SA1037AK / 2SA1576A /  
2SA1774H / 2SA2029.  
2SC2412K  
2SC4081  
1.25  
2.1  
1.6  
2.8  
Structure  
Epitaxial planar type  
NPN silicon transistor  
0.1Min.  
0.3Min.  
Each lead has same dimensions  
Each lead has same dimensions  
ROHM : UMT3  
EIAJ : SC-70  
(1) Emitter  
(2) Base  
ROHM : SMT3  
EIAJ : SC-59  
(1) Emitter  
(2) Base  
JEDEC : SOT-323  
(3) Collector  
JEDEC : SOT-346  
(3) Collector  
Abbreviated symbol: B*  
Abbreviated symbol: B*  
2SC4617  
2SC5658  
1.2  
0.2 0.8 0.2  
( )  
1
( )  
2
( )  
3
( )  
2
(3)  
0.8  
1.6  
( )  
1
0.15Max.  
0.1Min.  
(1) Base  
(2) Emitter  
(3) Collector  
ROHM : EMT3  
EIAJ : SC-75A  
(1) Emitter  
(2) Base  
ROHM : VMT3  
JEDEC : SOT-416  
(3) Collector  
Abbreviated symbol: B*  
Abbreviated symbol: B*  
* Denotes hFE  
Absolute maximum (Ta=25C)  
Parameter  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
60  
50  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
7
V
I
C
0.15  
0.2  
A
2SC2412K, 2SC4081  
2SC4617, 2SC5658  
Collector power  
dissipation  
PC  
W
0.15  
150  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55 to +150  
Electrical characteristics (Ta=25C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Conditions  
BVCBO  
BVCEO  
BVEBO  
60  
50  
7
V
V
I
I
I
C
=50μA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
C=1mA  
V
E=50μA  
I
CBO  
EBO  
FE  
CE(sat)  
0.1  
0.1  
390  
0.4  
μA  
μA  
V
CB=60V  
I
Emitter cutoff current  
V
EB=7V  
CE=6V, I  
/I =50mA/5mA  
h
120  
V
C
=1mA  
DC current transfer ratio  
V
V
I
C B  
Collector-emitter saturation voltage  
Transition frequency  
f
T
180  
2
MHz  
pF  
V
CE=12V, I  
CE=12V, I  
E=2mA, f=100MHz  
Cob  
3.5  
V
E=0A, f=1MHz  
Output capacitance  
www.rohm.com  
2012.01 - Rev.D  
1/3  
c
2012 ROHM Co., Ltd. All rights reserved.  

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