5秒后页面跳转
2SC2412-Q-T PDF预览

2SC2412-Q-T

更新时间: 2024-10-01 20:58:39
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 78K
描述
Transistor

2SC2412-Q-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92JESD-609代码:e0
湿度敏感等级:1端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

2SC2412-Q-T 数据手册

 浏览型号2SC2412-Q-T的Datasheet PDF文件第2页 
M C C  
2SC2412  
2SC2412-Q  
2SC2412-R  
2SC2412-S  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Power Dissipation: 0.2W (TA=25R)  
NPN Silicon  
Epitaxial Transistors  
Collector Current: 0.15A  
Collector-base Voltage: 60V  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
Symbol  
Rating  
Rating  
50  
60  
7.0  
0.15  
Unit  
V
V
V
A
SOT-23  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
A
D
C
PC  
TJ  
TSTG  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
0.2  
-55 to +150  
-55 to +150  
W
OC  
OC  
B
C
E
B
F
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
H
G
J
VCEO  
VCBO  
VEBO  
ICBO  
Collector-Emitter Voltage  
(IC=1.0mAdc, IB=0)  
Collector-Base Voltage  
(IC=50uAdc, IE=0)  
Emitter-Base Voltage  
(IE=50uAdc, IC=0)  
50  
60  
7.0  
---  
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
K
DIMENSIONS  
MM  
---  
Vdc  
INCHES  
MIN  
Collector Cutoff Current  
(VCB=60Vdc,IE=0)  
0.1  
0.1  
uAdc  
uAdc  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
IEBO  
Emitter Cutoff Current  
(VEB=7.0Vdc, IC=0)  
---  
ON CHARACTERISTICS  
F
hFE  
VCE(sat)  
fT  
DC Current Gain  
120  
---  
---  
560  
---  
Vdc  
G
H
J
(IC=1.0mAdc, VCE=6.0Vdc)  
Collector Saturation Voltage  
(IC=50mAdc, IB=5.0mAdc)  
Transition Frequency  
.085  
.37  
---  
---  
0.4  
---  
K
150  
MHz  
Suggested Solder  
Pad Layout  
(VCE=12Vdc, IC=2.0mAdc,  
f=100MHz)  
.031  
.800  
.035  
.900  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
Q
R
S
.079  
2.000  
inches  
mm  
120-270  
BQ  
180-390  
BR  
270-560  
BS  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: 2  
2007/03/01  
1 of 2  

与2SC2412-Q-T相关器件

型号 品牌 获取价格 描述 数据表
2SC2412Q-T RECTRON

获取价格

暂无描述
2SC2412R RECTRON

获取价格

暂无描述
2SC2412R MCC

获取价格

1500mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, PACKAGE-3
2SC2412-R MCC

获取价格

NPN Silicon Epitaxial Transistors
2SC2412-R YANGJIE

获取价格

SOT-23
2SC2412-R-T MCC

获取价格

Transistor
2SC2412R-T RECTRON

获取价格

Transistor
2SC2412-R-TP MCC

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SC2412-R-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
2SC2412S CJ

获取价格

Transistor