M C C
2SC2412
2SC2412-Q
2SC2412-R
2SC2412-S
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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TM
Micro Commercial Components
Features
•
Power Dissipation: 0.2W (TA=25R)
NPN Silicon
Epitaxial Transistors
•
•
Collector Current: 0.15A
Collector-base Voltage: 60V
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
Rating
Rating
50
60
7.0
0.15
Unit
V
V
V
A
SOT-23
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
A
D
C
PC
TJ
TSTG
Collector power dissipation
Junction Temperature
Storage Temperature
0.2
-55 to +150
-55 to +150
W
OC
OC
B
C
E
B
F
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
H
G
J
VCEO
VCBO
VEBO
ICBO
Collector-Emitter Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Voltage
(IC=50uAdc, IE=0)
Emitter-Base Voltage
(IE=50uAdc, IC=0)
50
60
7.0
---
---
---
---
---
---
---
---
Vdc
Vdc
K
DIMENSIONS
MM
---
Vdc
INCHES
MIN
Collector Cutoff Current
(VCB=60Vdc,IE=0)
0.1
0.1
uAdc
uAdc
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
IEBO
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0)
---
ON CHARACTERISTICS
F
hFE
VCE(sat)
fT
DC Current Gain
120
---
---
560
---
Vdc
G
H
J
(IC=1.0mAdc, VCE=6.0Vdc)
Collector Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
Transition Frequency
.085
.37
---
---
0.4
---
K
150
MHz
Suggested Solder
Pad Layout
(VCE=12Vdc, IC=2.0mAdc,
f=100MHz)
.031
.800
.035
.900
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
R
S
.079
2.000
inches
mm
120-270
BQ
180-390
BR
270-560
BS
.037
.950
.037
.950
www.mccsemi.com
Revision: 2
2007/03/01
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