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TM
2SC2412K
Micro Commercial Components
Features
•
Power Dissipation: 0.2W (TA=25R)
NPN Silicon
Epitaxial Transistors
•
•
Collector Current: 0.15A
Collector-base Voltage: 60V
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
Rating
Rating
50
60
7.0
0.15
Unit
V
V
V
A
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
SOT-23-3L
A
D
C
PC
TJ
TSTG
Collector power dissipation
Junction Temperature
Storage Temperature
0.2
-55 to +150
-55 to +150
W
OC
OC
B
C
E
B
Electrical Characteristics @ 25OC Unless Otherwise Specified
E
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
VCEO
VCBO
VEBO
ICBO
Collector-Emitter Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Voltage
(IC=50uAdc, IE=0)
Emitter-Base Voltage
(IE=50uAdc, IC=0)
Collector Cutoff Current
(VCB=60Vdc,IE=0)
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0)
50
60
7.0
---
---
---
---
---
---
---
---
Vdc
Vdc
H
G
J
K
---
Vdc
DIMENSIONS
INCHES
MAX
.117
MM
0.1
0.1
uAdc
uAdc
DIM
A
B
C
D
E
G
H
J
K
MIN
.113
.108
.061
.036
.073
MIN
2.87
2.75
1.55
.925
1.85
.04
1.12
.14
.34
MAX
2.97
2.85
1.65
.975
1.95
.100
1.25
.17
NOTE
IEBO
---
.112
.065
.038
.077
.0039
.049
.007
.015
ON CHARACTERISTICS
hFE
VCE(sat)
fT
DC Current Gain
120
---
---
560
---
Vdc
.0016
.044
.006
.013
(IC=1.0mAdc, VCE=6.0Vdc)
Collector Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
Transition Frequency
(VCE=12Vdc, IC=2.0mAdc,
f=100MHz)
---
---
0.4
---
.37
Suggested Solder
Pad Layout
150
MHz
.031
.800
.035
.900
CLASSIFICATION OF hFE
.087
2.200
inches
mm
Rank
Range
Marking
Q
R
S
120-270
BQ
180-390
BR
270-560
BS
.037
.950
.037
.950
www.mccsemi.com
Revision: 2
2006/05/14
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