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2SC2412KSP PDF预览

2SC2412KSP

更新时间: 2024-11-25 12:59:47
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
2页 186K
描述
TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

2SC2412KSP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:unknown
风险等级:5.22Is Samacsys:N
Base Number Matches:1

2SC2412KSP 数据手册

 浏览型号2SC2412KSP的Datasheet PDF文件第2页 
M C C  
2SC2412-Q  
2SC2412-R  
2SC2412-S  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
NPN Silicon  
Epitaxial Transistors  
RoHS Compliant. See ordering information)  
Power Dissipation: 0.2W (TA=25R)  
·
Collector Current: 0.15A  
Collector-base Voltage: 60V  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
SOT-23  
Maximum Ratings  
A
Symbol  
Rating  
Rating  
50  
Unit  
V
V
V
A
D
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
C
60  
7.0  
0.15  
B
C
PC  
TJ  
TSTG  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
0.2  
-55 to +150  
-55 to +150  
W
OC  
OC  
E
B
F
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
H
G
J
OFF CHARACTERISTICS  
VCEO  
VCBO  
VEBO  
ICBO  
Collector-Emitter Voltage  
(IC=1.0mAdc, IB=0)  
Collector-Base Voltage  
(IC=50uAdc, IE=0)  
Emitter-Base Voltage  
(IE=50uAdc, IC=0)  
Collector Cutoff Current  
(VCB=60Vdc,IE=0)  
Emitter Cutoff Current  
(VEB=7.0Vdc, IC=0)  
50  
60  
7.0  
---  
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
K
DIMENSIONS  
INCHES  
MIN  
MM  
DIM  
A
B
C
D
E
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
---  
Vdc  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
0.1  
0.1  
uAdc  
uAdc  
IEBO  
---  
F
G
H
J
ON CHARACTERISTICS  
.085  
.37  
hFE  
VCE(sat)  
fT  
DC Current Gain  
120  
---  
---  
560  
---  
Vdc  
K
(IC=1.0mAdc, VCE=6.0Vdc)  
Collector Saturation Voltage  
(IC=50mAdc, IB=5.0mAdc)  
Transition Frequency  
---  
---  
0.4  
---  
Suggested Solder  
Pad Layout  
150  
MHz  
(VCE=12Vdc, IC=2.0mAdc,  
f=100MHz)  
.031  
.800  
.035  
.900  
.079  
2.000  
inches  
mm  
CLASSIFICATION OF hFE  
Rank  
Q
R
S
Range  
Marking  
120-270  
BQ  
180-390  
BR  
270-560  
BS  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 2  

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