Datasheet > 2SC2412KQKT1

2SC2412KQKT1

更新时间： 2022-11-25 16:55:23

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	182K
描述
General Purpose Transistors(NPN Silicon)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC2412KQKT1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

2SC2412K*LT1

COLLECTOR

BASE

EMITTER

CASE 318–07, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Collector power dissipation

Junction temperature

Storage temperature

7.0

150

0.2

mAdc

P _C

T _j

150

°C

T _stg

-55

+150

°C

DEVICE MARKING

2SC2412K*LT1 =G1F

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I_C= 1 mA)

V _(BR)CEO

—

Emitter–Base Breakdown Voltage

(I_E= 50 µA)

V _(BR)EBO

V _(BR)CBO

I _CBO

—

Collector–Base Breakdown Voltage

(I_C= 50 µA)

—

Collector Cutoff Current

(V_CB= 60 V)

0.1

µA

Emitter cutoff current

I _EBO

(V_EB= 7 V)

Collector-emitter saturation voltage

(I_C/ I_B= 50 mA / 5m A)

DC current transfer ratio

(V _CE= 6 V, I _C= 1mA)

Transition frequency

V _CE(sat)

h _FE

—

0.4

120

––

560

––

f _T

—

180

2.0

––

MHz

(V _CE= 12 V, I _E= – 2mA, f =30MHz )

Output capacitance

C _ob

3.5

(V _CB= 12 V, I _E= 0A, f =1MHz )

h _FEvalues are classified as follows:

hFE

120~270

180~390

270~560

M36–1/3

12 3

中文翻译

下载PDF

与2SC2412KQKT1相关器件

型号	品牌	描述	获取价格	数据表
2SC2412KQP	MCC	暂无描述	获取价格
2SC2412KR	ROHM	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| SC-59	获取价格
2SC2412KR	MCC	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI	获取价格
2SC2412K-R	YANGJIE	SOT-23-3L	获取价格
2SC2412KR-G	WEITRON	Transistor	获取价格
2SC2412KRGP	CHENMKO	Transistor,	获取价格