是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 6 A | 基于收集器的最大容量: | 120 pF |
配置: | SINGLE | 最高频带: | VERY HIGH FREQUENCY BAND |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2098_13 | NJSEMI |
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NPN EPITAXIAL PLANAR TYPE | |
2SC2099 | TOSHIBA |
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TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) | |
2SC2100 | ETC |
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TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 15A I(C) | SOT-121VAR | |
2SC2101 | ETC |
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TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 2A I(C) | STX-8 | |
2SC2102 | ETC |
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TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 3.5A I(C) | STX-8 | |
2SC2103 | ETC |
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TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 6A I(C) | STX-M4 | |
2SC2103A | ETC |
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TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 6A I(C) | STX-8 | |
2SC2104 | ETC |
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TRANSISTOR | BJT | NPN | 800MA I(C) | STX-M4 | |
2SC2105 | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | |
2SC2106 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 2.8A I(C) | STX-M4 |