Datasheet > 2SC2120_11

2SC2120_11

更新时间： 2022-09-17 09:34:51

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	133K
描述
NPN Plastic Encapsulated Transistor

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2SC2120_11 数据手册

2SC2120

0.8 A , 35 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES

ꢀ

High DC Current Gain

Complementary to 2SA950

ꢀ

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE

Millimeter

REF.

Product-Rank

2SC2120-O

2SC2120-Y

160~320

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

Range

100~200

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

0.8

Collector Current - Continuous

Collector Power Dissipation

P_C

0.6

Thermal Resistance From Junction to Ambient

Junction, Storage Temperature

R_θJA

T_J, T_STG

208

°C / W

°C

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

Emitter Cut – Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=0.1mA, I_E=0

I_C=10mA, I_B=0

I_E=0.1mA, I_C=0

0.1

320

0.5

0.8

µA

V_CB=35V, I_E=0

I_CEO

V_CE=25V, I_B=0

I_EBO

V_EB=5V, I_C=0

DC Current Gain

h_FE

100

V_CE=1V, I_C=100mA

I_C=500mA, I_B=20mA

V_CE=1V, I_C=10mA

V_CB=10V, I_E=0, f=1MHz

Collector to Emitter Saturation Voltage

Base to Emitter voltage

V_CE(sat)

V_BE

Collector Output Capacitance

Transition Frequency

C_ob

f_T

100

MHz V_CE=5V, I_C=10mA

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

28-Jan-2011 Rev. B

Page 1 of 2

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