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2SC2137 PDF预览

2SC2137

更新时间: 2024-11-20 06:19:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 193K
描述
isc Silicon NPN Power Transistor

2SC2137 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

2SC2137 数据手册

 浏览型号2SC2137的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC2137  
DESCRIPTION  
·High Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 400V (Min)  
·High Switching Speed  
APPLICATIONS  
·Switching regulator and high voltage switching applications.  
·High speed DC-DC converter applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
MAX  
500  
400  
6
UNIT  
V
V
V
Collector Current-Continuous  
Base Current-Continuous  
7
A
IB  
2
A
Collector Power Dissipation  
@TC=25  
PC  
80  
W
Tj  
Junction Temperature  
150  
-65~150  
Tstg  
Storage Temperature Range  
isc Websitewww.iscsemi.cn  

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TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 30MA I(C) | SOT-173