Datasheet > 暂无类别数据> 2SC2001-K-BP-HF

2SC2001-K-BP-HF

更新时间： 2024-11-24 13:04:15

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管
页数	文件大小	规格书
2页	215K
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数据手册

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2SC2001-K-BP-HF 数据手册

M C C

2SC2001-M

2SC2001-L

2SC2001-K

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Capable of 0.6Watts of Power Dissipation.

NPN Silicon

Plastic-Encapsulate

Transistor

Collector-current 0. 7A

Collector-base Voltage 30V

Operating and storage junction temperature range: -55^OC to +150^OC

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

Marking: C2001

Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS

Compliant. See ordering information)

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V _(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

---

Vdc

(I _C=10mAdc, I =0)

Collector-Base Breakdown Voltage

(I _C=100uAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I _E=100uAdc, I_C=0)

Collector Cutoff Current

(V_CB=30Vdc, I_E=0)

Collector Cutoff Current

5.0

---

Adc

0.1

uAdc

Vdc

I_CEO

----

---

(V_CE=20Vdc, I =0)

I_EBO

Emitter Cutoff Current

(V _EB=5.0Vdc, I_C=0)

uAdc

ON CHARACTERISTICS

h_FE

DC Current Gain

(I _C=100mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I _C=700mAdc, I_B=70mAdc)

Base-Emitter Saturation Voltage

(I _C=700mAdc, I_B=70mAdc)

---

400

0.6

1.2

---

Vdc

MHz

V _CE(sat)

V_(BE)sat

Transition Frequency

(V_CE=6.0Vdc, I_C=10mAdc, f=30MHz)

DIMENSIONS

INCHES

DIM

MIN

MAX

.190

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.170

.550

.010

.130

.096

CLASSIFICATION OF HFE

.190

.590

.020

.160

.104

Rank

Range

90-180

135-270

200-400

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

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