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2SC2001M-BP PDF预览

2SC2001M-BP

更新时间: 2024-11-20 13:04:15
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
2页 215K
描述
700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SC2001M-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-92
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:5.19
Is Samacsys:N最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):90JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

2SC2001M-BP 数据手册

 浏览型号2SC2001M-BP的Datasheet PDF文件第2页 
M C C  
2SC2001-M  
2SC2001-L  
2SC2001-K  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Capable of 0.6Watts of Power Dissipation.  
NPN Silicon  
Plastic-Encapsulate  
Transistor  
Collector-current 0. 7A  
Collector-base Voltage 30V  
Operating and storage junction temperature range: -55OC to +150OC  
Epoxy meets UL 94 V-0 flammability rating  
·
x
Moisure Sensitivity Level 1  
Marking: C2001  
Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS  
Compliant. See ordering information)  
TO-92  
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V (BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
25  
30  
---  
---  
Vdc  
Vdc  
(I C=10mAdc, I =0)  
B
Collector-Base Breakdown Voltage  
(I C=100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(I E=100uAdc, IC=0)  
Collector Cutoff Current  
(VCB=30Vdc, IE=0)  
Collector Cutoff Current  
5.0  
---  
---  
Adc  
C
0.1  
0.1  
0.1  
uAdc  
Vdc  
ICEO  
----  
---  
(VCE=20Vdc, I =0)  
E
IEBO  
Emitter Cutoff Current  
(V EB=5.0Vdc, IC=0)  
uAdc  
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
(I C=100mAdc, VCE=1.0Vdc)  
Collector-Emitter Saturation Voltage  
(I C=700mAdc, IB=70mAdc)  
Base-Emitter Saturation Voltage  
(I C=700mAdc, IB=70mAdc)  
90  
---  
---  
50  
400  
0.6  
1.2  
---  
---  
Vdc  
Vdc  
MHz  
V CE(sat)  
V(BE)sat  
fT  
E
C
B
G
Transition Frequency  
(VCE=6.0Vdc, IC=10mAdc, f=30MHz)  
DIMENSIONS  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
MAX  
.190  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.170  
.170  
.550  
.010  
.130  
.096  
CLASSIFICATION OF HFE  
.190  
.590  
.020  
.160  
.104  
Rank  
M
L
K
Range  
90-180  
135-270  
200-400  
E
G
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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