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2SC2001L PDF预览

2SC2001L

更新时间: 2024-11-19 23:20:11
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
1页 340K
描述
BJT

2SC2001L 数据手册

  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2SC2001  
Features  
·
·
·
·
Capable of 0.6Watts of Power Dissipation.  
NPN Silicon  
Plastic-Encapsulate  
Transistor  
Collector-current 0. 7A  
Collector-base Voltage 30V  
Operating and storage junction temperature range: -55OC to +150OC  
TO-92  
Pin Configuration  
Bottom View  
E
C
B
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V (BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
25  
30  
---  
---  
Vdc  
Vdc  
(I C=10mAdc, I =0)  
B
Collector-Base Breakdown Voltage  
(I C=100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(I E=100uAdc, IC=0)  
Collector Cutoff Current  
(VCB=30Vdc, IE=0)  
Collector Cutoff Current  
5.0  
---  
---  
Adc  
C
0.1  
0.1  
0.1  
uAdc  
Vdc  
ICEO  
----  
---  
(VCE=20Vdc, I =0)  
E
IEBO  
Emitter Cutoff Current  
(V EB=5.0Vdc, IC=0)  
uAdc  
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
(I C=100mAdc, VCE=1.0Vdc)  
Collector-Emitter Saturation Voltage  
(I C=700mAdc, IB=70mAdc)  
Base-Emitter Saturation Voltage  
(I C=700mAdc, IB=70mAdc)  
90  
---  
---  
50  
400  
0.6  
1.2  
---  
---  
Vdc  
Vdc  
MHz  
V CE(sat)  
V(BE)sat  
fT  
G
Transition Frequency  
(VCE=6.0Vdc, IC=10mAdc, f=30MHz)  
DIMENSIONS  
INCHES  
MIN  
.175  
MM  
MIN  
DIM  
A
MAX  
MAX  
4.70  
4.70  
---  
NOTE  
.185  
.185  
---  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
B
C
.175  
.500  
CLASSIFICATION OF HFE  
D
.016  
.020  
.145  
.105  
0.63  
3.68  
2.67  
Rank  
M
L
K
E
G
.135  
.095  
Range  
90-180  
135-270  
200-400  
www.mccsemi.com  

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