Datasheet > 2SC1755

2SC1755

更新时间： 2024-09-15 05:57:27

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	78K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC1755 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC1755

DESCRIPTION

·With TO-220 package

·High breakdown voltage

APPLICATIONS

·For TV chroma,video ,audio

output applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

300

UNIT

Open base

Open collector

Collector current (DC)

Collector current-peak

0.2

I_CM

0.7

T_a=25℃

T_C=25℃

1.2

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-40~150

℃

T_stg

12 3 4

中文翻译

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与2SC1755相关器件

型号	品牌	获取价格	描述	数据表
2SC1755_15	JMNIC	获取价格	Silicon NPN Power Transistors
2SC1755_2014	JMNIC	获取价格	Silicon NPN Power Transistors
2SC1755C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 700MA I(C) \| TO-220AB
2SC1755-CB	ONSEMI	获取价格	Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC1755D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 700MA I(C) \| TO-220AB
2SC1755D-RC	ONSEMI	获取价格	Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC1755D-YA	ONSEMI	获取价格	Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC1755E	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 700MA I(C) \| TO-220AB
2SC1755E-RA	ONSEMI	获取价格	Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC1755E-YA	ONSEMI	获取价格	Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla