WILLAS
2SC1766
SOT-89 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
SOT-89
FEATURES
Pb-Free package is available
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RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Small Flat Package
1. BASE
z
z
z
2. COLLECTOR
3. EMITTER
High Speed Switching Time
Low Collector-emitter saturation voltage
APPLICATIONS
Power Amplifier
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MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
50
50
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Collector Current
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
250
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=100µA,IE=0
Min
50
50
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=1mA,IB=0
V
IE=100µA,IC=0
V
VCB=50V,IE=0
0.1
0.1
240
µA
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
hFE(1)
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=1A,IB=50mA
IC=1A,IB=50mA
VCE=2V,IC=0.5A,f=100MHz
70
20
DC current gain
hFE(2)
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
0.5
1.2
V
V
120
MHz
CLASSIFICATION OF hFE(1)
P
Q
Y
RANK
RANGE
82–180
P1766
120–270
Q1766
180–390
Y1766
MARKING
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
2012-10
WILLAS ELECTRONIC CORP.