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2SC1766 PDF预览

2SC1766

更新时间: 2024-02-07 13:13:16
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管开关
页数 文件大小 规格书
2页 362K
描述
SOT-89 Plastic-Encapsulate Transistors

2SC1766 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SC1766 数据手册

 浏览型号2SC1766的Datasheet PDF文件第2页 
WILLAS  
2SC1766  
SOT-89 Plastic-Encapsulate Transistors  
TRANSISTOR (NPN)  
SOT-89  
FEATURES  
Pb-Free package is available  
z
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
Small Flat Package  
1. BASE  
z
z
z
2. COLLECTOR  
3. EMITTER  
High Speed Switching Time  
Low Collector-emitter saturation voltage  
APPLICATIONS  
Power Amplifier  
z
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Vlue  
Unit  
V
50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5
V
Collector Current  
A
PC  
Collector Power Dissipation  
Thermal Resistance From Junctioo ient  
Junction Temperature  
500  
250  
150  
-55~+150  
mW  
/W  
RθJA  
Tj  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTa5unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC=100µA,IE=0  
Min  
50  
50  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltag
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=1mA,IB=0  
V
IE=100µA,IC=0  
V
VCB=50V,IE=0  
0.1  
0.1  
240  
µA  
µA  
Emitter cut-off current  
IEBO  
VEB=5V,IC=0  
hFE(1)  
VCE=2V, IC=0.5A  
VCE=2V, IC=2A  
IC=1A,IB=50mA  
IC=1A,IB=50mA  
VCE=2V,IC=0.5A,f=100MHz  
70  
20  
DC current gain  
hFE(2)  
*
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
0.5  
1.2  
V
V
120  
MHz  
CLASSIFICATION OF hFE(1)  
P
Q
Y
RANK  
RANGE  
82180  
P1766  
120270  
Q1766  
180390  
Y1766  
MARKING  
*Pulse test: pulse width 300μs, duty cycle2.0%.  
2012-10  
WILLAS ELECTRONIC CORP.  

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