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2SB954AP PDF预览

2SB954AP

更新时间: 2024-11-01 23:20:11
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页数 文件大小 规格书
3页 68K
描述
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-220AB

2SB954AP 数据手册

 浏览型号2SB954AP的Datasheet PDF文件第2页浏览型号2SB954AP的Datasheet PDF文件第3页 
Power Transistors  
2SB0954, 2SB0954A (2SB954, 2SB954A)  
Silicon PNP epitaxial planar type  
For power amplification  
Unit: mm  
Features  
I
G
High forward current transfer ratio hFE which has satisfactory linearity  
Low collector to emitter saturation voltage VCE(sat)  
Full-pack package which can be installed to the heat sink with  
one screw  
10.0 0.2  
5.5 0.2  
4.2 0.2  
G
2.7 0.2  
G
φ3.1 0.1  
Absolute Maximum Ratings (T =25˚C)  
I
C
Parameter  
Collector to  
Symbol  
Ratings  
Unit  
2SB0954  
2SB0954A  
2SB0954  
–60  
1.3 0.2  
1.4 0.1  
VCBO  
V
base voltage  
Collector to  
–80  
+0.2  
–0.1  
0.5  
–60  
0.8 0.1  
VCEO  
V
emitter voltage 2SB0954A  
Emitter to base voltage  
Peak collector current  
Collector current  
–80  
2.54 0.25  
VEBO  
ICP  
–5  
V
A
A
5.08 0.5  
–2  
1
2
3
IC  
–1  
1:Base  
Collector power TC=25°C  
30  
2:Collector  
3:Emitter  
TO–220 Full Pack Package(a)  
PC  
W
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
I
C
Parameter  
Symbol  
ICEO  
Conditions  
min  
typ  
max  
–300  
–300  
–200  
–200  
–1  
Unit  
Collector cutoff  
2SB0954  
2SB0954A  
2SB0954  
2SB0954A  
VCE = –30V, IB = 0  
µA  
current  
VCE = –60V, IB = 0  
VCE = –60V, VBE = 0  
VCE = –80V, VBE = 0  
VEB = –5V, IC = 0  
Collector cutoff  
current  
ICES  
µA  
mA  
V
Emitter cutoff current  
IEBO  
VCEO  
Collector to emitter 2SB0954  
voltage 2SB0954A  
–60  
–80  
70  
IC = –30mA, IB = 0  
*
hFE1  
VCE = –4V, IC = – 0.2A  
VCE = –4V, IC = –1A  
250  
Forward current transfer ratio  
hFE2  
15  
Collector to emitter saturation voltage VCE(sat)  
IC = –1A, IB = – 0.125A  
VCE = –4V, IC = –1A  
–1  
V
V
Base to emitter voltage  
Transition frequency  
Turn-on time  
VBE  
fT  
–1.3  
VCE = –5V, IC = – 0.2A, f = 10MHz  
30  
0.5  
1.2  
0.3  
MHz  
µs  
ton  
tstg  
tf  
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,  
VCC = –50V  
Storage time  
µs  
Fall time  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
70 to 150  
120 to 250  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1

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