Power Transistors
2SB0954, 2SB0954A (2SB954, 2SB954A)
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
Features
I
G
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
one screw
10.0 0.2
5.5 0.2
4.2 0.2
G
2.7 0.2
G
φ3.1 0.1
Absolute Maximum Ratings (T =25˚C)
I
C
Parameter
Collector to
Symbol
Ratings
Unit
2SB0954
2SB0954A
2SB0954
–60
1.3 0.2
1.4 0.1
VCBO
V
base voltage
Collector to
–80
+0.2
–0.1
0.5
–60
0.8 0.1
VCEO
V
emitter voltage 2SB0954A
Emitter to base voltage
Peak collector current
Collector current
–80
2.54 0.25
VEBO
ICP
–5
V
A
A
5.08 0.5
–2
1
2
3
IC
–1
1:Base
Collector power TC=25°C
30
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
I
C
Parameter
Symbol
ICEO
Conditions
min
typ
max
–300
–300
–200
–200
–1
Unit
Collector cutoff
2SB0954
2SB0954A
2SB0954
2SB0954A
VCE = –30V, IB = 0
µA
current
VCE = –60V, IB = 0
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VEB = –5V, IC = 0
Collector cutoff
current
ICES
µA
mA
V
Emitter cutoff current
IEBO
VCEO
Collector to emitter 2SB0954
voltage 2SB0954A
–60
–80
70
IC = –30mA, IB = 0
*
hFE1
VCE = –4V, IC = – 0.2A
VCE = –4V, IC = –1A
250
Forward current transfer ratio
hFE2
15
Collector to emitter saturation voltage VCE(sat)
IC = –1A, IB = – 0.125A
VCE = –4V, IC = –1A
–1
V
V
Base to emitter voltage
Transition frequency
Turn-on time
VBE
fT
–1.3
VCE = –5V, IC = – 0.2A, f = 10MHz
30
0.5
1.2
0.3
MHz
µs
ton
tstg
tf
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
Storage time
µs
Fall time
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
70 to 150
120 to 250
Note.) The Part numbers in the Parenthesis show conventional part number.
1