SMD Type
Transistors
PNP Transistors
2SB956
1.70 0.1
■ Features
● Large collector power dissipation PC.
● Low collector to emitter saturation voltage VCE(sat).
● Complementary to 2SD1280
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-20
V
-20
-5
Collector Current - Continuous
Collector current -Pulse
I
C
-1
A
I
CP
-2
1
Collector Power Dissipation
Junction Temperature
P
C
W
℃
T
J
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA, I =0
Ic= -1 mA, I =0
= -100μA, I =0
CB= -20V , I =0
EB= -5V , I =0
=-1 A, I =-50mA
=-500 mA, I =-50mA
Min
-20
-20
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
-1
uA
V
I
C
-1
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
B
-0.5
-1.2
280
V
C
B
h
FE(1)
FE(2)
V
V
V
V
CE= -2V, I
CE= -2V, I
C
= -500mA
= -1.5 A
130
50
DC current gain
h
C
Collector output capacitance
Transition frequency
Cob
CB = –6V, I
CE= -6V, I
E
= 0, f = 1MHz
40
pF
f
T
E
= 50mA,f=200MHz
200
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SB956-R
130-210
HR
2SB956-S
180-280
HS
1
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