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2SB954Q PDF预览

2SB954Q

更新时间: 2024-09-30 20:21:55
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
2页 237K
描述
Transistor

2SB954Q 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SB954Q 数据手册

 浏览型号2SB954Q的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
2SB954  
DESCRIPTION  
·Low Collector Saturation Voltage-  
: VCE(sat)= -1.0V(Max)@IC= -1A  
·Good Linearity of hFE  
APPLICATIONS  
·Designed for power amplifications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
-60  
V
V
V
A
A
-60  
-5  
Collector Current-Continuous  
Collector Current-Peak  
-1  
ICM  
-2  
Collector Power Dissipation  
@ Ta=25℃  
2
PC  
W
Collector Power Dissipation  
@ TC=25℃  
30  
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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