Power Transistors
2SB0953, 2SB0953A (2SB953, 2SB953A)
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1444 and 2SD1444A
Unit: mm
10.0 0.2
5.5 0.2
4.2 0.2
Features
I
G
2.7 0.2
Low collector to emitter saturation voltage VCE(sat)
High-speed switching
G
G
Full-pack package which can be installed to the heat sink with
one screw
φ3.1 0.1
Absolute Maximum Ratings (T =25˚C)
I
C
1.3 0.2
Parameter
Symbol
Ratings
Unit
1.4 0.1
Collector to
2SB0953
2SB0953A
2SB0953
–40
+0.2
–0.1
VCBO
V
0.5
base voltage
Collector to
–50
0.8 0.1
–20
VCEO
V
2.54 0.25
emitter voltage 2SB0953A
Emitter to base voltage
Peak collector current
Collector current
–40
5.08 0.5
VEBO
ICP
–5
V
A
A
1
2
3
–12
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
IC
–7
Collector power TC=25°C
30
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
I
C
Parameter
Symbol
Conditions
min
typ
max
–50
–50
–50
Unit
µA
µA
V
Collector cutoff
2SB0953
VCB = –40V, IE = 0
VCB = –50V, IE = 0
EB = –5V, IC = 0
ICBO
current
2SB0953A
Emitter cutoff current
IEBO
VCEO
hFE1
V
Collector to emitter 2SB0953
voltage 2SB0953A
–20
–40
45
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
Forward current transfer ratio
*
hFE2
VCE = –2V, IC = –2A
90
260
– 0.6
–1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –5A, IB = – 0.16A
V
V
IC = –5A, IB = – 0.16A
Transition frequency
Collector output capacitance
Turn-on time
fT
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
150
140
0.1
0.5
0.1
MHz
pF
µs
Cob
ton
tstg
tf
Storage time
IC = –2A, IB1 = –66mA, IB2 = 66mA
µs
Fall time
µs
*hFE2 Rank classification
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the
rank classification.
Rank
hFE2
Q
P
90 to 180
130 to 260
Note.) The Part numbers in the Parenthesis show conventional part number.
1