2SB954A

更新时间： 2024-02-27 09:46:58

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	49K
描述
Silicon PNP epitaxial planar type(For power amplification)

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中文翻译

获取价格

技术参数
数据手册

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2SB954A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB954A 数据手册

Power Transistors

2SB954, 2SB954A

Silicon PNP epitaxial planar type

For power amplification

Unit: mm

Features

■

●

High forward current transfer ratio h_FEwhich has satisfactory linearity

Low collector to emitter saturation voltage V_CE(sat)

10.0±0.2

5.5±0.2

4.2±0.2

●

2.7±0.2

●

Full-pack package which can be installed to the heat sink with

one screw

φ3.1±0.1

Absolute Maximum Ratings (T =25˚C)

■

Parameter

Collector to

Symbol

Ratings

Unit

2SB954

2SB954A

2SB954

–60

1.3±0.2

1.4±0.1

V_CBO

base voltage

Collector to

–80

+0.2

–0.1

0.5

–60

0.8±0.1

V_CEO

emitter voltage 2SB954A

Emitter to base voltage

Peak collector current

Collector current

–80

2.54±0.25

V_EBO

I_CP

–5

5.08±0.5

–2

I_C

–1

1:Base

Collector power T_C=25°C

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CEO

Conditions

min

typ

max

–300

–200

–1

Unit

2SB954

V_CE= –30V, I_B= 0

µA

current

2SB954A

2SB954

V_CE= –60V, I_B= 0

V_CE= –60V, V_BE= 0

V_CE= –80V, V_BE= 0

V_EB= –5V, I_C= 0

Collector cutoff

current

I_CES

µA

2SB954A

Emitter cutoff current

I_EBO

V_CEO

Collector to emitter 2SB954

voltage 2SB954A

–60

–80

I_C= –30mA, I_B= 0

h_FE1

V_CE= –4V, I_C= – 0.2A

V_CE= –4V, I_C= –1A

250

Forward current transfer ratio

h_FE2

Collector to emitter saturation voltage V_CE(sat)

I_C= –1A, I_B= – 0.125A

V_CE= –4V, I_C= –1A

–1

Base to emitter voltage

Transition frequency

Turn-on time

V_BE

f_T

–1.3

V_CE= –5V, I_C= – 0.2A, f = 10MHz

0.5

1.2

0.3

MHz

µs

t_on

t_stg

t_f

I_C= –1A, I_B1= – 0.1A, I_B2= 0.1A,

V_CC= –50V

Storage time

µs

Fall time

µs

^*h_FE1Rank classification

Rank

h_FE1

70 to 150

120 to 250

中文翻译

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