Datasheet > 2SB857C

2SB857C

更新时间： 2024-11-19 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	32K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 4A I(C) \| TO-220AB

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数据手册

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2SB857C 数据手册

2SB857, 2SB858

Silicon PNP Triple Diffused

ADE-208-859 (Z)

1st. Edition

Sep. 2000

Application

Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134

Outline

TO-220AB

1. Base

2. Collector

(Flange)

3. Emitter

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

2SB857

2SB858

–70

–60

–5

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–70

–50

–5

–4

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at T_C= 25°C

I_C(peak)

P_C*¹

–8

°C

150

Tstg

–45 to +150

°C

12 3 4 5

中文翻译

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