是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SIP | 包装说明: | HALOGEN FREE, TO-126C, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.07 |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 15 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB857G-C-T6C-K | UTC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic | |
2SB857G-C-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
2SB857G-D-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
2SB857G-X-T6C-K | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857G-X-TA3-T | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857G-X-TN3-R | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857L-B-T6C-A-K | UTC |
获取价格 |
Transistor | |
2SB857L-B-T6C-K | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857L-B-T6C-R | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857L-B-T6C-T | UTC |
获取价格 |
SILICON PNP TRANSISTOR |