是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SIP | 包装说明: | HALOGEN FREE, TO-126C, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.07 |
Is Samacsys: | N | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 15 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB857G-C-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
2SB857G-D-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
2SB857G-X-T6C-K | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857G-X-TA3-T | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857G-X-TN3-R | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857L-B-T6C-A-K | UTC |
获取价格 |
Transistor | |
2SB857L-B-T6C-K | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857L-B-T6C-R | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857L-B-T6C-T | UTC |
获取价格 |
SILICON PNP TRANSISTOR | |
2SB857L-B-TN3-F-R | UTC |
获取价格 |
Transistor |