是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SC-62 | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.46 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.3 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 135 | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB800FL-T2-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,80V V(BR)CEO,300MA I(C),SOT-89 | |
2SB800FM | ETC |
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BJT | |
2SB800FM-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB800FM-T1-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,80V V(BR)CEO,300MA I(C),SOT-89 | |
2SB800FM-T2-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,80V V(BR)CEO,300MA I(C),SOT-89 | |
2SB800-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB800-T1FK | NEC |
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Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB800-T1FL | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB800-T1FM | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB800-T2 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, |