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2SB804

更新时间: 2024-11-18 12:53:39
品牌 Logo 应用领域
TYSEMI 晶体晶体管放大器
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描述
World standard miniature package:SOT-89 Excellent DC current gain linearity.

2SB804 数据手册

  
Product specification  
2SB804  
Features  
World standard miniature package:SOT-89  
High collector to base voltage:VCBO -100V  
Excellent DC current gain linearity.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-100  
-80  
V
-5  
V
-1  
-1.5  
mA  
mA  
W
Collector current(Pulse) *  
Total power dissipation  
Junction temperature  
IC  
PT  
2
Tj  
150  
Storage temperature range  
Tstg  
-55 to +150  
* PW 10ms,duty cycle 50%.  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-100  
-100  
400  
Unit  
nA  
VCB = -100 V, IE = 0  
IEBO  
VEB = -5.0 V, IC = 0  
nA  
VCE = -2.0 V, IC = -100 mA  
VCE = -2.0 V, IC = -500 mA  
90  
25  
200  
80  
DC current gain *  
hFE  
Collector saturation voltage *  
Base saturation voltage *  
Base-emitter voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = -500mA, IB = -50mA  
VBE(sat) IC = -500mA, IB = -50mA  
-0.29 -0.5  
-0.9 -1.5  
V
V
VBE  
fT  
VCE = -10 V, IC = -10 mA  
VCE = -5.0 V, IE = 10 mA  
-600 -640 -700  
mV  
MHz  
pF  
80  
26  
Cob  
VCB = -10 V, IE = 0 , f = 1.0 MHz  
* Pulsed: PW  
350 ìs, duty cycle  
2%  
hFE Classification  
Marking  
hFE  
AW  
90 180  
AV  
135 270  
AU  
200 400  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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