是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 0.3 A | 配置: | Single |
最小直流电流增益 (hFE): | 90 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB800-T2FK | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB800-T2FL | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB800-T2FM | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB804 | TYSEMI |
获取价格 |
World standard miniature package:SOT-89 Excellent DC current gain linearity. | |
2SB804 | NEC |
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PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | |
2SB804 | KEXIN |
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PNP Silicon Epitaxial Transistor | |
2SB804 | BL Galaxy Electrical |
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80V,1A,Medium Power PNP Bipolar Transistor | |
2SB804AU | ETC |
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BJT | |
2SB804AU-AY | RENESAS |
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TRANSISTOR,BJT,PNP,80V V(BR)CEO,1A I(C),SOT-89 | |
2SB804AU-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |