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2SB744 PDF预览

2SB744

更新时间: 2024-11-06 03:56:31
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管功率双极晶体管
页数 文件大小 规格书
2页 332K
描述
PNP Silicon Power Transistor

2SB744 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SIP包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
最大集电极电流 (IC):3 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2SB744 数据手册

 浏览型号2SB744的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
2SB744  
Micro Commercial Components  
Features  
Capable of 10Watts of Power Dissipation.  
Collector-current 3.0A  
PNP Silicon  
Power Transistor  
Collector-base Voltage 70V  
Operating and storage junction temperature range: -55OC to  
+150OC  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Marking:B744  
ꢀꢁꢂꢃꢄꢅ  
Maximum Ratings  
A
K
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
45  
70  
5.0  
3.0  
Unit  
V
V
V
A
D
PC  
TJ  
TSTG  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
10  
W
OC  
OC  
R
E
-55 to +150  
-55 to +150  
B
N
P
M
F
G
H
L
C
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
VCEO(SUS)  
V(BR)CBO  
V(BR)EBO  
Collector-Emitter Sustaining Voltage  
(IC=1.0mAdc, IB=0)  
45  
70  
---  
---  
---  
Vdc  
Vdc  
Vdc  
1
2
3
Collector-Base Breakdown Voltage  
(IC=1.0mAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=1.0mAdc, IC=0)  
J
J
Q
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
5.0  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ON CHARACTERISTICS  
hFE(1)  
Forward Current Transfer ratio  
ꢁꢄꢇꢈꢃꢅꢉ  
ꢂꢁꢄꢉ  
ꢍꢎꢏꢍꢉ  
ꢂꢂꢉ  
(IC=20mAdc, VCE=5.0Vdc)  
Forward Current Transfer ratio  
(IC=0.5Adc, VCE=5.0Vdc)  
30  
60  
---  
---  
---  
---  
ꢀꢁꢂꢉ  
ꢊꢉ  
ꢒꢉ  
ꢇꢉ  
ꢀꢉ  
ꢃꢉ  
ꢘꢉ  
ꢂꢊꢋꢉ  
ꢍꢎꢏꢏꢉ  
ꢍꢎꢓꢔꢉ  
ꢍꢎꢓꢏꢉ  
ꢍꢎꢕꢔꢉ  
ꢍꢎꢕꢏꢉ  
ꢍꢎꢍꢏꢏꢉ  
ꢍꢎꢍꢐꢉ  
ꢍꢎꢍꢏꢏꢉ  
ꢍꢎꢕꢍꢉ  
ꢍꢎꢕꢖꢉ  
ꢍꢎꢔꢖꢉ  
ꢍꢎꢍꢖꢉ  
ꢍꢎꢍꢗ  
ꢂꢁꢄꢉ  
ꢐꢎꢐꢍꢉ  
ꢂꢊꢋꢉ  
ꢄꢆꢌꢃꢉ  
ꢉꢉ  
hFE(2)  
ꢑꢎꢏꢍ  
ꢕꢖꢎꢗꢍ  
ꢕꢏꢎꢏꢔꢉ  
ꢖꢎꢍ  
320  
2.0  
ꢍꢎꢓꢍꢉ  
ꢍꢎꢕꢓꢉ  
ꢍꢎꢕꢗꢉ  
ꢍꢎꢍꢗꢓꢉ  
ꢍꢎꢍꢔꢉ  
ꢍꢎꢍꢗꢓꢉ  
ꢍꢎꢍꢑꢉ  
ꢍꢎꢕꢗꢉ  
ꢍꢎꢔꢏꢉ  
ꢕꢗꢎꢐꢔꢉ  
ꢏꢎꢑꢍꢉ  
ꢏꢎꢕꢍꢉ  
ꢍꢎꢔꢓꢉ  
ꢕꢎꢓꢍꢉ  
ꢍꢎꢔꢓꢉ  
ꢗꢎꢍꢑꢉ  
ꢏꢎꢍꢓꢉ  
ꢕꢓꢎꢝꢍꢉ  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=1.5Adc, IB=0.15Adc)  
Vdc  
ꢏꢎꢏꢍ  
ꢍꢎꢑꢓ  
ꢕꢎꢐꢍ  
ꢍꢎꢑꢓ  
ꢗꢎꢖꢑ  
ꢏꢎꢖꢓ  
ꢕꢔꢎꢏꢍ  
ꢕꢎꢍ  
ꢙꢉ  
ꢈꢉ  
ꢚꢉ  
ꢛꢉ  
ꢜꢉ  
ꢂꢉ  
ꢍꢎꢓ  
ꢞꢉ  
 ꢉ  
!ꢉ  
ꢍꢎꢍꢔꢉ  
ꢍꢎꢍꢕꢑꢉ  
ꢍꢎꢖꢏꢉ  
ꢍꢎꢍꢑꢉ  
ꢍꢎꢍꢗꢏꢉ  
ꢍꢎꢖꢖꢉ  
ꢕꢎꢓꢓꢉ  
ꢍꢎꢖꢓꢉ  
ꢕꢎꢝꢓ  
ꢍꢎꢔꢍ  
ꢕꢕꢎꢗꢍ  
ꢕꢍꢎꢑꢍꢉ  
www.mccsemi.com  
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Revision: 3  
2006/05/17  

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