是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最大集电极电流 (IC): | 5 A | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 2000 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 30 W |
子类别: | Other Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB601-S | RENESAS |
获取价格 |
2SB601-S | |
2SB601-S-AZ | RENESAS |
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2SB601-S-AZ | |
2SB605 | NEC |
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PNP SILICON TRANSISTOR | |
2SB605-AZ | NEC |
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暂无描述 | |
2SB605K | NEC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | SPAKVAR | |
2SB605-K | NEC |
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Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB605L | NEC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | SPAKVAR | |
2SB605-L-AZ | NEC |
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Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB605M | NEC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | SPAKVAR | |
2SB605-M | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |