Datasheet > 2SB613

2SB613

更新时间： 2022-12-20 16:30:10

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	155K
描述
isc Silicon PNP Power Transistors

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB613 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SB613

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -250V(Min)

·High Power Dissipation-

: P_C= 150W(Max)@T_C=25℃

·High Current Capability

·Complement to Type 2SD583

APPLICATIONS

·Designed for high power amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

VALUE

-250

-5

UNIT

-15

I_B

-5

Collector Power Dissipation

@T_C=25℃

P_C

150

℃

T_J

Junction Temperature

Storage Temperature

200

-65~200

T_stg

isc Website：www.iscsemi.cn

12 3

下载PDF

与2SB613相关器件

型号	品牌	描述	获取价格	数据表
2SB616	ISC	Silicon PNP Power Transistors	获取价格
2SB616	SAVANTIC	Silicon PNP Power Transistors	获取价格
2SB621	PANASONIC	Silicon PNP epitaxial planer type	获取价格
2SB621A	PANASONIC	Silicon PNP epitaxial planer type	获取价格
2SB621AQ	PANASONIC	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, RO	获取价格
2SB621AR	ETC	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| TO-92	获取价格