Datasheet > 2SB601_15

2SB601_15

更新时间： 2024-02-12 08:10:23

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	177K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB601_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB601

DESCRIPTION

·With TO-220C package

·DARLINGTON

·High DC current gain

·Low collector saturation voltage

APPLICATIONS

·For low-frequency power amplifier and

low-speed switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector current-Pulse

Base current-DC

CONDITIONS

VALUE

-100

-7

UNIT

Open emitter

Open base

Open collector

-5

I_CM

-8

I_B

-0.5

T_C=25℃

T_a=25℃

P_T

Total power dissipation

1.5

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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与2SB601_15相关器件

型号	品牌	获取价格	描述	数据表
2SB601_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB601K	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB
2SB601-K	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
2SB601-K	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB, SC-46, 3 PIN
2SB601K-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-220AB
2SB601K-S	RENESAS	获取价格	2SB601K-S
2SB601K-S-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-262AA
2SB601L	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB
2SB601-L	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB, SC-46, 3 PIN
2SB601L-S	RENESAS	获取价格	2SB601L-S