生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.36 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 3000 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 30 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB601L-S | RENESAS |
获取价格 |
2SB601L-S | |
2SB601L-S-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-262AA | |
2SB601M | NEC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB | |
2SB601-M | NEC |
获取价格 |
暂无描述 | |
2SB601M-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-220AB | |
2SB601M-S | RENESAS |
获取价格 |
2SB601M-S | |
2SB601M-S-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-262AA | |
2SB601-S | RENESAS |
获取价格 |
2SB601-S | |
2SB601-S-AZ | RENESAS |
获取价格 |
2SB601-S-AZ | |
2SB605 | NEC |
获取价格 |
PNP SILICON TRANSISTOR |