是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.36 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 5000 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB601K-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-220AB |
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2SB601K-S | RENESAS |
获取价格 |
2SB601K-S |
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2SB601K-S-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-262AA |
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2SB601L | NEC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
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2SB601-L | RENESAS |
获取价格 |
5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB, SC-46, 3 PIN |
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2SB601L-S | RENESAS |
获取价格 |
2SB601L-S |
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2SB601L-S-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-262AA |
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2SB601M | NEC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
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2SB601-M | NEC |
获取价格 |
暂无描述 |
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2SB601M-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,5A I(C),TO-220AB |
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