Datasheet > 2SB600_2014

2SB600_2014

更新时间： 2024-01-07 21:47:20

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	150K
描述
Silicon PNP Power Transistors

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中文翻译

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2SB600_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB600

DESCRIPTION

·With TO-3 package

·High power dissipations

·Complement to type 2SD555

APPLICATIONS

·For use in audio and power

amplifier applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-200

-5

UNIT

Open emitter

Open base

Open collector

-10

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

200

℃

T_j

150

T_stg

-55~200

12 3

中文翻译

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