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2SB536N PDF预览

2SB536N

更新时间: 2024-11-01 21:19:51
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
3页 124K
描述
Transistor

2SB536N 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

2SB536N 数据手册

 浏览型号2SB536N的Datasheet PDF文件第2页浏览型号2SB536N的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB536  
DESCRIPTION  
·
·With TO-220C package  
·Complement to type 2SD381  
·Low collector saturation voltage  
APPLICATIONS  
·Audio frequency power amplifier  
·Low speed power switching  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBO
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
-130  
-120  
-5  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
-1.5  
A
ICM  
Collector current-peak  
Base current  
-3.0  
A
IB  
-0.3  
A
Ta=25  
TC=25℃  
1.5  
PT  
Total power dissipation  
W
20  
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-50~150  

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