2SB1571HZ

更新时间： 2024-11-11 23:20:07

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
4页	44K
描述
TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 5A I(C) \| TO-243

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中文翻译

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2SB1571HZ 数据手册

DATA SHEET

PNP SILICON EPITAXIAL TRANSISTOR

2SB1571

PNP SILICON EPITAXIAL TRANSISTOR

PACKAGE DRAWING (Unit: mm)

FEATURES

• Low V^CE(sat): V^CE(sat)1≤ −0.35 V

• Complementary to 2SD2402

4.5±0.1

1.6±0.2

1.5±0.1

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

I^B(DC)

I^B(pulse)

P^T

−50

−30

−6.0

−5.0

−8.0

−0.2

−0.4

2.0

150

°C

0.42

±0.06

0.42

±0.06

Collector Current (pulse) ^Note1

Base Current (DC)

1.5

0.47

±0.06

3.0

+0.03

0.41

–0.05

Base Current (pulse) ^Note1

Total Power Dissipation ^Note2

E: Emitter

C: Collector (Fin)

B: Base

Junction Temperature

T^j

Storage Temperature Range

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

T^stg

–55 to + 150

2. When mounted on ceramic substrate of 16 cm²x 0.7 mm

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

CHARACTERISTICS

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I^CBO

TEST CONDITIONS

V^CB= −50 V, I^E= 0

MIN.

TYP.

MAX.

−100

UNIT

−

I^EBO

V^EB= −6.0 V, I^C= 0

Note

DC Current Gain

h^FE1

h^FE2

V^BE

V^CE= −1.0 V, I^C= −1.0 A

V^CE= −1.0 V, I^C= −2.0 A

V^CE= −1.0 V, I^C= −0.1 A

I^C= −3.0 A, I^B= −0.15 A

I^C= −5.0 A, I^B= −0.25 A

I^C= −3.0 A, I^B= −0.15 A

V^CE= −10 V, I^E= 0.5 A

100

−0.6

200

−0.665

−0.17

−0.28

−0.89

150

400

−0.7

−

Note

Base to Emitter Voltage

Note

Collector Saturation Voltage

V^CE(sat)1

V^CE(sat)2

V^BE(sat)

f^T

−0.35

−0.55

−1.2

Collector Saturation Voltage

Note

Base Saturation Voltage

Gain Bandwidth Product

Output Capacitance

Turn-on Time

MHz

C^ob

V^CB= −10 V, I^E= 0, f = 1.0 MHz

I^C= −2.0 A, V^CC= −10 V,

100

t^on

265

Storage Time

t^stg

R^L= 5.0 Ω, I^B1= −I^B2= −0.1 A,

350

Fall Time

t^f

Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%

h^FECLASSFICATION

Marking

h^FE2

160 to 320

100 to 200

200 to 400

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published December 2001 NS CP(K)

Printed in Japan

D15930EJ2V0DS00 (2nd edition)

2001

12 3 4

中文翻译

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与2SB1571HZ相关器件

型号	品牌	获取价格	描述	数据表
2SB1571-HZ	RENESAS	获取价格	5A, 30V, PNP, Si, POWER TRANSISTOR
2SB1571-HZ-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1571HZ-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,5A I(C),TO-243
2SB1571-X	KEXIN	获取价格	PNP Transistors
2SB1571-Y	KEXIN	获取价格	PNP Transistors
2SB1571-Z	KEXIN	获取价格	PNP Transistors
2SB1572	KEXIN	获取价格	Silicon PNP Epitaxial Planar
2SB1572	TYSEMI	获取价格	Low VCE(sat): VCE(sat) -0.4 V Complementary to 2SD2403
2SB1572	RENESAS	获取价格	3A, 60V, PNP, Si, POWER TRANSISTOR
2SB1572	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR

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